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Kingston Technology ValueRAM memory module 4 GB 1 x 4 GB DDR3L
Overview
4GB DDR3L 1600MHz Non-ECC, CL11, 1.35V, Unbuffered, SODIMM Module
JEDEC standard 1.35V and 1.5V Power Supply VDDQ = 1.35V and 1.5V 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C Asynchronous Reset PCB: Height1.18” (30mm), double sided component Lead Free RoHS Compliant
More Information
Internal memory type
DDR3L
Memory clock speed
1600 MHz
ECC
No
Memory form factor
204-pin SO-DIMM
SKU
KVR16LS11/4
EAN
0740617219784
Manufacturer
Kingston Technology
Availability
In Stock
Product Family
ValueRAM
PDF URLs
Kingston Technology is the world's independent memory leader and is well-known for providing high quality memory products at an attractive price. Kingston ValueRAM is your best source for industry-standard memory to maximise the performance and productivity of your system. Built with A-grade components only, Kingston ValueRAM memory modules come with a lifetime warranty.
Power Memory voltage 1.35,1.5 V Technical details Memory layout 1 x 4096 MB Internal memory 4096 MB Chips organisation X8 Error indication No Country of origin Taiwan Bus clock rate 1600 MHz Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Laptop Memory form factor 204-pin SO-DIMM CAS latency 11 Memory voltage 1.35,1.5 V Memory bus 64 bit Lead plating Gold Module configuration 512M X 64 Row cycle time 48.125 ns Refresh row cycle time 260 ns Row active time 35 ns ECC No Internal memory type DDR3L Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Laptop Memory form factor 204-pin SO-DIMM CAS latency 11 Memory voltage 1.35,1.5 V Memory bus 64 bit Lead plating Gold Module configuration 512M X 64 Row cycle time 48.125 ns Refresh row cycle time 260 ns Row active time 35 ns Country of origin Taiwan ECC No Internal memory type DDR3L Harmonized System (HS) code 84733020
Operational conditions Operating temperature (T-T) 0 - 85 °C Storage temperature (T-T) -55 - 100 °C Weight & dimensions Width 67.6 mm Height 30 mm Logistics data Harmonized System (HS) code 84733020 Other features Memory layout 1 x 4096 MB Internal memory 4096 MB Chips organisation X8 Error indication No Country of origin Taiwan Bus clock rate 1600 MHz Harmonized System (HS) code 84733020
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