Samsung MZ-V9S1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

SKU
MZ-V9S1T0BW
In stock
£89.32 £74.43
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Overview
MZ-V9S1T0BW
Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.
More Information
SKU MZ-V9S1T0BW
EAN 8806095575674
Specification
Hard drive
SSD capacity1 TB
Memory typeV-NAND TLC
Data transmission
Read speed7150 MB/s
Write speed6300 MB/s
Random write (4KB)1350000 IOPS
Random read (4KB)850000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Features
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
SSD capacity1 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7150 MB/s
TRIM supportYes
Write speed6300 MB/s
Memory typeV-NAND TLC
Random write (4KB)1350000 IOPS
Random read (4KB)850000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
M.2 SSD size2280 (22 x 80 mm)
Performance
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
SSD capacity1 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7150 MB/s
TRIM supportYes
Write speed6300 MB/s
Memory typeV-NAND TLC
Random write (4KB)1350000 IOPS
Random read (4KB)850000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC
SSD form factorM.2
Weight & dimensions
Width80.2 mm
Weight9 g
Height22.1 mm
Depth2.38 mm
Operational conditions
Operating temperature (T-T)0 - 70 °C
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Hardware encryptionYes
SSD form factorM.2
Manufacturer Samsung
In Stock Y
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